WIN Semiconductors qualifies 40V GaN power process for NP12-0B

WIN Semiconductors says its NP12-0B 0.12µm gallium nitride-on-SiC process has passed qualification for 40-volt operation, expanding its use in power amplifiers, T/R switches and front-end MMICs. The company says the update targets next-generation radio access networks, satellite communications and radar systems.

Why it matters: - WIN Semiconductors says the 40V qualification broadens the design space for high-performance front-end parts used in radio access networks, satellite communications and radar. - The process aims to combine higher output power, lower switching loss and low noise figure in one platform. - Those capabilities can help designers build more rugged amplifiers, antenna switches and low-noise amplifiers for demanding RF systems.

What happened: - WIN Semiconductors announced that NP12-0B, its 0.12µm GaN-on-SiC technology, has been qualified for 40V operation. - The process supports power amplifier, T/R switch and single-chip front-end MMIC designs. - WIN Semiconductors said the platform is being showcased at the 2026 IEEE MTT-S International Microwave Symposium in Boston from June 7-12. - The company also pointed customers to booth #23048 for more information.

The details: - NP12-0B uses transistor improvements designed for high ruggedness in deep-saturation and high-compression pulsed and continuous-wave conditions. - At 18GHz and 40V, output transistors tuned for maximum power deliver 7.9 W/mm Psat, 13.3 dB gain and 42% power-added efficiency. - The same power cell tuned for maximum efficiency delivers 6.1 W/mm Psat, 14.6 dB gain and 55% power-added efficiency at 18GHz. - In switch mode, common-gate devices show insertion loss below 0.4 dB, power handling greater than 42 dBm and sub-20 ns switching speed using a 40V control voltage. - For low-noise applications, NP12-0B posts a typical Fmin of 1 dB with 10 dB associated gain at 20GHz. - WIN Semiconductors said the platform has been in production since 2024. - The platform is available with an Enhanced Moisture Ruggedness option for humidity resistance in plastic packaging. - The updated 40V Process Design Kit for PA, switch and LNA designs will be available for customer download in Q2 2026.

Between the lines: - The 40V milestone suggests WIN Semiconductors is positioning NP12-0B as a more flexible platform for multiple front-end functions, not just power amplification. - The mix of power, switching and noise performance points to a push for integrated RF front ends where designers want fewer compromises. - The emphasis on moisture ruggedness also signals a packaging strategy that could matter in real-world deployment, not just lab performance.

What’s next: - Customers are expected to get access to the updated 40V PDK in Q2 2026. - WIN Semiconductors is using the microwave symposium to market NP12-0B and its broader GaN, GaAs and InP portfolio. - Further design wins would likely depend on how customers use the platform in next-generation wireless, satellite and radar products.

The bottom line: - WIN Semiconductors is expanding NP12-0B into a 40V-qualified GaN platform with stronger performance across power, switching and noise-sensitive RF applications.